Low temperature electrical transportation behavior of In0.5Ga0.5P grown on GaAs (100) substrate by liquid phase epitaxy

Abstract The Hall effect and resistivity measurement over a wide temperature range of 1.5 to 300 K for undoped InGaP epitaxial layer grown on GaAs ( 100 ) substrate by liquid phase epitaxy are reported for the first time. The conduction behavior of InGaP at low temperature similar to that of Ge single crystal has been observed. With the help of two-band model, the conduction properties are analysed and the carrier scattering machnisms are also established.