Transient Analysis of Semiconductor Devices Using an MeV Ion Microprobe.

Ions traversing a semiconductor material give rise to an e-h pair plasma whose interaction within the material and subsequent collection depends highly on the electronic properties of the material. The Ion Beam Induced Charge (IBIC) technique although allowing the imaging of both depletion and defect regions within a device gives little or no information regarding the timing of the charge collection process. Transient analysis on the other hand, particularly when combined with the IBIC, provides a more comprehensive study of the sample.