FilSiC – From the epi layer to the chip

FilSiC – From the epi layer to the chip Gregory GROSSET (1), Laurent ROUX (1), Pierre BROSSELARD (2), Philippe CUSSAC (3) 1: IBS, ZI Peynier, Rue gaston imbert prolongee 13790 Peynier, gregory.grosset@ion-beam-services.fr 2: Laboratoire AMPERE, Pierre.Brosselard@insa-lyon.fr, 3: CIRTEM, p.cussac@cirtem.com Abstract The development of electric vehicles, new energy sources and smart grids, optimize the use of electricity in industry will require the development of high power converters and high efficiency systems to operate at very high temperatures. SiC (Silicon Carbide) components are at the heart of these developments to increase efficiency, reduce the size of the converters and simplify cooling systems. Various R&D programs supported by French public organizations (DGA, DGCIS ...) developed and maintained expertise in the field of components in SiC in France, laboratories, large groups and some small active in the field. Several SME working on this problematic (CIRTEM, ECA-EN, IBS, NOVASIC, Vegatec), based on their complementary expertise and support reference laboratories (AMPERE, LAPLACE), decided to band together to overcome technical locks leading to the creation of a pro