Epitaxial lift-off of ZnSe based II-VI structures

The epitaxial lift‐off technique is applied to II–VI based structures. Epilayers of 255 nm thickness containing quantum wells are lifted off their substrates and redeposited onto polyimide coated GaAs. The technique has also been applied to II–VI samples onto which dielectric films had been deposited. Photoluminescence measurements show that the material quality has not been degraded during the processing. The success of this technique with II–VI’s opens up many possibilities for the integration of these materials with metals and dielectrics in vertical structure devices.