Mg Tilted-Angle Ion Implantation for Threshold Voltage Control and Suppression of the Short Channel Effect in GaN MISFETs
2017
This paper demonstrates that threshold voltages of GaN MISFET are controlla-ble by varying the Mg ion doses for Mg ion implantation. Furthermore, it de-monstrates for the first time that the short channel effect can be suppressed using a halo structure that has a p-layer in channel regions adjacent to source/ drain regions using tilt ion implantation. A device with a Mg dose of 8 × 1013/cm2 achieved maximum drain current of 240 mA/mm and a transconductance of 40 mS/mm. These results indicate a definite potential for the use of our new process in GaN MISFETs for applications in power switching devices.
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