Characterization of Amorphous High-k Thin Films by EXAFS and GIXS

Silicon and nitrogen incorporated Hf oxide (HfSiON) is considered to be a promising alternative gate insulator for next‐generation MOSFETs. EXAFS and GIXS (Grazing Incidence X‐ray Scattering) have been applied to the characterization of amorphous HfSiON films at SPring‐8. Novel cluster models have been suggested based on the analogy to the ordered states for the Zr‐O‐N ternary system.