The Effect of Proton Irradiation on the Resistance of Gold Contacts on Silicon

The sample for the experimental studies was the layered metal-semiconductor formation. There have been the two films of gold of 50 nm thicknesses deposited unto opposite surfaces of p-silicon with a surface layer of silicon oxide. The effect of 1.5 MeV proton beam on sample was investigated. Only the uncovered by films surface of the sample was irradiated. The integral dose of irradiation was 2*1015 p / cm2. The direction of the proton beam was parallel to the contacts. Performed with the irradiated sample experiments detected changes of the electrical properties of the gold film contacts far away from the active region of irradiation. After irradiation the contact resistance decreased by several times.