Luminescence study in InGaAs/AlGaAs multi-quantum-well light emitting diode with p–n junction engineering

Overlapping between the quantum-well structure and p–n junction plays an important role in the development of high-efficiency GaAs-based light-emitting diodes (LEDs). In this work, we apply p–n junction engineering to study electro-photoluminescence spectra under open-circuit, forward voltage, and reverse voltage conditions. Through modifying the doping of p-layer or n-layer, luminescent characteristics are apparently improved as a result of the more effective overlapping of the quantum-well structure and p–n junction caused by energy band modification, with the more balanced carrier and stronger confinement in quantum wells. Furthermore, the electroluminescence spectra of all LEDs studied herein are consistent with the photoluminescence results. This work provides an explicit way to tune p- and n-doping to increase emission efficiency, which is important for research and industrial applications.Overlapping between the quantum-well structure and p–n junction plays an important role in the development of high-efficiency GaAs-based light-emitting diodes (LEDs). In this work, we apply p–n junction engineering to study electro-photoluminescence spectra under open-circuit, forward voltage, and reverse voltage conditions. Through modifying the doping of p-layer or n-layer, luminescent characteristics are apparently improved as a result of the more effective overlapping of the quantum-well structure and p–n junction caused by energy band modification, with the more balanced carrier and stronger confinement in quantum wells. Furthermore, the electroluminescence spectra of all LEDs studied herein are consistent with the photoluminescence results. This work provides an explicit way to tune p- and n-doping to increase emission efficiency, which is important for research and industrial applications.