Highly strained very high-power laser diodes with InGaAs QWs

Abstract With the aim of realizing laser diodes in the wavelength range beyond 1100 nm on GaAs, we have studied the indium incorporation behaviour into pseudomorphic InGaAs-quantum wells with extremely high indium content grown by metalorganic vapour phase epitaxy. A wide growth temperature range between 490°C and 770°C as well as the dependence on V/III-ratio and strain compensation has been studied. At the maximum In-content of 41%, a photoluminescence wavelength of 1238 nm at room temperature is obtained. Laser diodes with an emission wavelength up to 1206 nm were processed. Structures with a slightly reduced In-content, emitting at 1120 nm, were processed to broad-area devices (100 μm×1000 μm) and show output powers up to 12 W, which corresponds to a record high internal power density of 23 MW/cm 2 , with a good reliability. LOC structures with a reduced far field below 30° and a higher indium content emit 8.5 W at 1170 nm.