Room-temperature, mid-IR (λ = 4.7μm) electroluminescence from single-stage intersubband GaAs-based edge emitters
2004
Strong room-temperature intersubband-emission is obtained at 4.7 microns by using deep quantum wells and high barriers in the active region. The emission linewidth is narrow (~20meV) and the 80K to 300K emission ratio is low (~2).
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