Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition

Abstract InGaN bulk layers and single quantum wells were grown on 1.4 to 2.4 μm thick GaN on sapphire films by atmospheric pressure metalorganic chemical vapour deposition (AP-MOCVD). The morphology of the epitaxial layers was strongly affected by the V III ratio in the gas phase. The incorporation efficiency of indium was observed to increase with higher growth rates and decreasing temperature, but was independent of the V III ratio in the investigated parameter range. In 0.16 Ga 0.84 N single quantum wells showed intense quantum well related luminescence at room temperature, with a full width at half maximum of 7.9 nm at a thickness of 50 A. Single quantum wells embedded in InGaN of graded composition showed superior properties compared to quantum wells with In 0.04 Ga 0.94 N barriers of constant composition.