Growth of vertical cavity surface emitting laser material on (3 1 1)B GaAs by MBE

Abstract We report on the growth of VCSEL structures on (3 1 1)B GaAs substrates. For the growth of AlGaAs and AlAs, the best morphology and material quality were obtained for growth temperatures > 650°C. Surface morphology and mirror reflectivity degraded significantly at low growth temperatures ( J th = 9 kA/cm 2 at − 40°C and 28 kA/cm 2 at room temperature. At − 40°C, 10 nW of SHG blue light at 485 nm was detected under pulsed conditions, and 2 nW was detected under CW conditions and was visible to the naked eye. By improving the structure we obtained CW lasing at room temperature with 300 A/cm 2 as a broad area laser and 1.4 kA/cm 2 as a VCSEL. A maximum power of 0.55 nW at 490 nm was detected CW at room temperature.