1550 nm flip-chip compatible electroabsorption-modulated laser with 40 Gb/s modulation capability

1.55µm electroabsorption-modulated laser (EML) devices designed for flip-chip mounting have been developed including a DFB laser, a butt joint coupled electroabsorption modulator (EAM), and a spot-size expander. Flip-chip mounting enables array-like arrangements of individually optimized discrete chips to be placed on optical PLC platforms like Silicon-on-Insulator (SOI) boards. The EMLs are based on the conventional InP/InGaAsP material system and rely on a buried heterostructure with Fe doped InP blocking. Large signal modulation at 25 Gb/s and 40Gb/s with high extinction ratio is demonstrated.