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Study on nano-scale threshold switching behavior of NbOx film for ReRAM selector application
Study on nano-scale threshold switching behavior of NbOx film for ReRAM selector application
2013
Y.M. Koo
Y.H. Choi
Euijun Cha
Donguk Lee
Jiyong Woo
J.H. Song
Kibong Moon
J. Park
Sanghyun Lee
Hyunsang Hwang
Keywords:
Resistive random-access memory
Electronic engineering
Nanoscopic scale
Materials science
Optoelectronics
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