Stoichiometric control via periods of open-circuit during electrodeposition
2014
Electrodeposition can enable stoichiometric control of deposited samples through variation of electroplating potential. We demonstrate an in-situ technique for deposit analysis and stoichiometric control by interspersing periods of open-circuit during deposition. Opening the circuit in an organic Cu-In-S plating bath allows greater incorporation of Cu, In, and/or S into deposited films, based upon the open-circuit voltage the film/electrolyte interface is allowed to achieve. With the same deposition potential, samples can be made to vary from highly Cu-rich to highly In-rich through selection of an appropriate open-circuit voltage limit.
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