N+/P Shallow Junction with High Dopant Activation and Low Contact Resistivity Fabricated by Solid Phase Epitaxy Method for Ge Technology

In this paper, solid phase epitaxy (SPE) process is proposed to improve phosphorous activation and hence reduce the contact resistivity of n+/p junction for Ge n-MOS technology. Over 1×1020 cm−3 electrical concentration and about 1.75×10−6 ohm·cm2 contact resistivity have been achieved at P+ implantation of 10keV and 5×1014cm−2 and annealing condition of 600oC, 10seconds. The fabricated N+/P diode shows 2 times higher forward current and well controlled leakage.