Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodes
2011
Metalorganic chemical vapor deposition (MOCVD) growths of linearly-shaped staggered InGaN quantum wells lightemitting
diodes are performed. The use of linearly-shaped staggered InGaN QWs leads to the shift of both electron and
hole wavefunction toward the center of the quantum well region with enhanced momentum matrix element, which
results in the enhancement of the spontaneous radiaitve recombination rate. The power-density-dependent
cathodoluminescence measurements for both conventional and linearly-shaped staggered InGaN QW show 2.5-3.5 times
increase in the integrated cathodoluminescence intensity by using the novel active region.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
11
References
0
Citations
NaN
KQI