Nonvolatile memory device and program method thereof

The present invention applies a first pass voltage to the plurality of word lines including the selected word line and connected to the selected word line verify voltage is higher than the reference voltage of the selected memory cell or verify voltage is lower than the reference voltage, the first program pass the lower-level than the voltage comprises a step of applying a second pass voltage and the program operation method of the nonvolatile memory device including the step of applying a verify voltage to the selected word line. Program, hot carriers, the channel boosting, a pass voltage, verify operations