How to exploit ion-induced stress relaxation to grow thick c-BN films*
2002
A recently developed procedure is reviewed allowing thick (>1 µm), high-quality c-BN films (>80 % c-BN) to be grown. It is based on the observation that compressive stress inevitably present in such films can be released by medium-energy (some hundred keV) ion irradiation without destroying the cubic phase.
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