Graded in-situ charge trapping layers to enable electrostatic chucking and excellent particle performance for boron-doped carbon films

The invention discloses a graded in-situ charge trapping layers to enable electrostatic chucking and excellent particle performance for boron-doped carbon films. The present disclosure generally relates to processing chamber seasoning layers having a graded composition. In one example, the seasoning layer is a boron-carbon-nitride (BCN) film. The BCN film may have a greater composition of boron atthe base of the film. As the BCN film is deposited, the boron concentration may approach zero, while the relative carbon and nitrogen concentration increases. The BCN film may be deposited by initially co-flowing a boron precursor, a carbon precursor, and a nitrogen precursor. After a first period of time, the flow rate of the boron precursor may be reduced. As the flow rate of boron precursor isreduced, RF power may be applied to generate a plasma during deposition of the seasoning layer.