Point defect engineered Si sub-bandgap light-emitting diodes

We present a novel approach to enhance light emission in Si and demonstrate sub-bandgap light-emitting diodes (LED) based on the introduction of point defects. Ion implantation, pulsed laser melting and rapid thermal annealing were used to create LEDs containing self-interstitial-rich optically active regions. Procedures to fabricate LEDs on a bulk silicon substrate and on a silicon-on-insulator (SOI) wafer will be presented, and methods to improve device performances will be discussed. The control and utilization of point defects represents a new approach toward creating Si in a stable, optically active form for Si-based optoelectronics.