A Method for Series-Resistance-Immune Extraction of Low-Frequency Noise Parameters in Nanoscale MOSFETs

This article presents a new methodology for the extraction of low-frequency noise (LFN) or random telegraph noise (RTN) parameters, such as the gate oxide interface trap density, ${N}_{\text {t}}$ , and the mobility fluctuations factor, $\Omega $ , without the influence of the source/drain series resistance, ${R}_{\text {sd}}$ . The method utilizes the ${Y}$ -function—which is immune to any first-order degradation, including the series resistance—as well as the intrinsic mobility degradation factors $\theta _{ {1,0}}$ and $\theta _{{2}}$ . The proposed extraction technique is first demonstrated through numerical calculations and then applied on experimental results of n-channel short length FinFETs. It is shown that if the ${R}_{\text {sd}}$ impact is not accounted for, the extracted LFN parameters through the classic carrier number fluctuations (CNF) with correlated mobility fluctuations (CMF) model can lead to significant extraction errors. This mainly concerns the correlated mobility factor $\Omega $ , which may be strongly underestimated, but also the extraction of the trap density ${N}_{\text {t}}$ .