Crystal growth of nonstoichiometric V5S8 by chemical transport

Abstract The relation between the composition of the starting material and the product crystal has been studied during the preparation of single crystals of nonstoichiometric compounds by closed system chemical transport. Sulphides of the V 5 S 8 - and V 3 S 4 - phases were examined. Because of the high equilibrium sulphur partial pressure of these compounds, the sulphur pressure was uniform in the tube and was determined by the equilibrium sulphur partial pressure of the starting material in the high-temperature region. This caused the deposition of sulphur-rich crystals in the low-temperature region.