Microswitch in 0.13 μm CMOS Process for IoT Device Transceivers

The rapid proliferation of the network of internet of things (IoT) have led to a significant demand for low-cost stand-alone communication devices which can currently be realised with CMOS RF integrated circuits. Therefore, it has become essential to design a compact microswitch to share the antenna at its transceiver frontend. This research proposes a compact microswitch design utilising a 0.13 μm CMOS process. The switch uses transistor width optimisation, gate bias resistance minimisation, resistive body floating technique and DC biasing at the input as well as the output nodes. The proposed switch achieved 0.465 dB insertion loss, 39.02 dB isolation and 18.11 dBm power handling capacity at an operating frequency of 2.4 GHz. Moreover, the core of the microswitch occupies only 0.0005 mm2 of silicon area without passive elements. Therefore, it is evident from our research that the microswitch is well suited for low power IoT transceiver applications operated at the widely used ISM (industrial, scientific and medical) 2.4 GHz band.