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Acemap > Paper > (11-20)Al2O3基板上の高In量In0.41Ga0.59N/GaNヘテロ構造のエピタキシャル成長

(11-20)Al2O3基板上の高In量In0.41Ga0.59N/GaNヘテロ構造のエピタキシャル成長

2016 
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