Development of Schottky Diode for THz Applications using Heterogeneous Resist Patterning

In this paper, we have fabricated the Schottky diode for THz applications by heterogeneous resist patterning method. The Schottky diode was developed using electron beam lithography and photolithography to connect the anode and the anode pad for a simple process. The measured performance of developed Schottky diode are of series resistance, 25.96 fF of junction capacitance, 1.25 of ideality factor and 547.6 GHz of cut-off frequency.