Organic siloxane copolymer film, method and deposition apparatus for producing same, and semiconductor device using such copolymer film

The present invention provides a multilayer copper wiring is suitable for the separation of the semiconductor device, at the interface is connected to an upper inorganic insulating film or the substrate and mechanical strength and excellent in adhesion as a practical relative dielectric constant of the entire insulating film is lower organic polymer film, the insulating organic polymer film is a cyclic siloxane and linear silicones as raw materials, by plasma excitation of both the organic siloxane copolymer polymerized film, wherein interface connected to the inorganic insulating film in which the film composition linear silicone component as a main component, so that a dense and excellent in adhesion interfacial bonding layer of the film quality, the inside of the membrane, the interior having a cyclic siloxane the cyclic siloxane component of holes surrounding the skeleton and a linear silicone components are mixed, and a lower density layer having a net-like structure having a composition varying in a thickness direction of the film forming copolymer a copper wiring buried multilayer film.