Analysis of Commercial Trench Power MOSFETs' Responses to ${\rm Co}^{60}$ Irradiation
2008
This paper presents a detailed analysis of commercial trench power MOSFET responses to Co 60 irradiation of all key d.c. electrical test parameters. Charge trapping in the gate oxide causes the threshold voltage ( V TH ) to shift, which, in turn, accounts for most of the degradation exhibited by the device after irradiation.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
6
References
11
Citations
NaN
KQI