Simulation analysis of III–V n-MOSFETs: Channel materials, Fermi level pinning and biaxial strain

In this work we employ a state-of-the-art Multi-Subband Monte Carlo simulator to investigate the performance of III–V n-MOSFETs with L G = 11.7nm. We analyze GaSb versus InGaAs strained and unstrained channel materials and the implications of Fermi level pinning on electrostatic and transport. We found that InGaAs MOSFETs can outperform strained silicon for low V DD applications. Advantages related to strained InGaAs are limited and mainly due to reduced Fermi Level Pinning.