A SPICE model of bi-layer resistive random access memory with stepped reset phenomenon

In this paper a SPICE model of bi-layer and bipolar metal oxide resistive random access memory (RRAM) is proposed. Stepped reset phenomenon in bipolar RRAM is included and the impact of buffer layer thickness on Ireset is reproduced. The model is verified by experimental results from AlOx/WOx based RRAM [1,2]. This model is useful for multi bits storage circuit design, read reference circuit design and other RRAM circuit.