Microwave‐induced zero‐resistance states in bilayer electron systems

In this work we report on the observation of zero‐resistance induced by microwave irradiation in a bilayer electron system formed by high‐mobility wide quantum wells. The observed zero‐resistance states (ZRS) are distinct from ZRS in single layer systems and develop for inverted magneto‐intersubband oscillations. We find that the inelastic mechanism of photoresistance explains satisfactorily our experimental results for moderate microwave intensity and low temperatures.