Low-Light-Level CMOS Image Sensor For Digitally Fused Night Vision Systems
2009
In this paper we present a VNIR solid state sensor technology suitable for next generation fused night vision systems.
This technology is based on a highly optimized low power 0.18um CMOS image sensor (CIS) process. We describe a
320(H) x 240(V) pixel prototype sensor based on this technology. The sensor features 5T pixels with pinned
photodiodes on a 6.5μm pitch with integrated micro-lens. The 5T pixel architecture enables both correlated double
sampling (CDS) and a lateral anti-blooming drain. The measured peak quantum efficiency of the sensor is greater than
50% at 600nm, and the read noise is less than 1e- RMS at room temperature. The sensor does not have any
multiplicative noise. The full well capacity is greater than 40ke-, the dark current is less than 3.8pA/cm2 at 20oC, and the
MTF at 77 lp/mm is 0.4 at 600nm. The sensor also achieves an intra-scene linear dynamic range of greater than 90dB
(30000:1) at room temperature.
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