Lateral-Photovoltaic Measurement of the Corbino Magnetoresistance of a Very Thin Layer–N2+-Implanted Layer on p-Si

This paper shows that the Corbino magnetoresistances of the p- and n-layers of a junction can be found from the lateral photovoltages (LPV's) measured under a magnetic field. There is no need to supply an external current to the sample in this method, since current-flows can be generated optically by irradiating part of the p-n junction, while the LPV's induced in the p- and n-layers can be measured at the same time. The electrical properties of the n-layer formed by N2+-implantation on a p-Si substrate (and of the substrate also) have been studied by this method. The temperature dependence of the magnetoresistance over the range from -41 to 30°C has shown that the carrier scattering mechanism in the implanted layer cannot be explained in terms of lattice scattering only, while lattice scattering is dominant in the substrate.