Measurements of degradation of silicon detectors and electronics in various radiation environments

Abstract Displacement damage in silicon particle detectors, exposed to a high-energy muon irradiation at the CERN SPS, is observed to be less in p-type than in n-type silicon. X-ray irradiation of various test structures reveals the importance of surface leakage currents. The irradiation of detectors and electronics in the UA2 collider experiment at the SPS indicates a strong, low energy neutron component, which degrades the detectors but hardly influences the CMOS circuits.