Si–Sb–Te films for phase-change random access memory

Electrical properties and crystallization behaviour of Si–Sb–Te films were studied and compared with those of a Ge2Sb2Te5 film. The resistivity ratio of Si–Sb–Te films can reach 106 during the amorphous–crystalline transition, accompanied with a small thickness change (less than 3%). The melting temperature of Si–Sb–Te films is lower than that of a Ge2Sb2Te5 film. Furthermore, the switching characteristics of the device using a Si10.7Sb39.5Te49.8 film were also studied. The device can be successfully switched with a 4 V, 100 ns pulse for SET operation and a 5 V, 40 ns pulse for RESET operation. A small RESET current and low power consumption can be obtained, which may be attributed to the low melting temperature and the high crystalline resistivity of Si–Sb–Te films. These results indicate the feasibility of Si–Sb–Te films in the application of phase-change random access memory.