Preparation and Characterization of SiCOH Film Using a New Precursor Trimethoxy [2-(oxabicyclo [4.1.0] hept-3yl) Ethyl] Silicane

The SiCOH film has been prepared by using a new precursor of trimethoxy [2-(7-oxabicyclo [4.1.hept-3-yl) ethy silane via sol-gel and spin-coating methods. The resulting films were characterized by SEM, TGA, AFM, FTIR, nanomechanical testing, and electrical measurements. The TGA result shows that the SiCOH film has good thermal stability, and no obvious thermal decomposition can be observed before 400°C. After being annealed at 350°C for 2 hours, the resulting SiCOH film exhibits a smooth surface (RMS=0.222nm), and a significant reduction of CHn groups in the film. Further, the film exhibits a novel high k value of 15.6, a leakage current density of 2.72 × 10-6 A/cm2 at 1 MV/cm, and good mechanical properties of Er ~ 12.61 GPa and H ~ 3.80 MPa.