A New Process for Depositing Tungsten Nitride Thin Films.

A new process for depositing tungsten nitride (WN x ) thin films is reported. It is based on plasma-enhanced chemical vapor deposition (PECVD) using WF 6 + N 2 + H 2 chemistry. High purity films that are stable in air have been obtained using the PECVD process. Effects of process conditions on conformality, film purity, and morphology are examined.