Resistivity reduction of low-carrier-density sputtered-MoS 2 film using fluorine gas

High-performance and low-power LSIs have been achieved by 3D transistor such as FinFET in logic and DRAM using crystalline-silicon channel and 3D-stacked devices in NAND flash using poly-crystalline-silicon channel [1]. For the future, monolithic transistors using atomic-layer materials are expected above the silicon devices [2]. A transition-metal di-chalcogenide (TMDC) such as molybdenum di-sulfide (MoS 2 ) is one of the promising candidates because of not only a higher mobility but also attractive functionalities such as flexibility and transparency [3]. However, it is very difficult to reduce a contact resistance, especially using doping [4-7].