Effect of oxygen ion beam bombardment on depth resolved hydrogen distribution in stoichiometric alumina thin films, deposited by e-beam evaporation

Effect of oxygen ion beam bombardment on the hydrogen impurity distribution (as a function of depth) in alumina thin films is discussed. It is shown that the bombardment of oxygen ion beam during electron beam evaporation significantly decreases the hydrogen content in the films. The observed peak of hydrogen distribution at the silica alumina interface is explained on the basis of morphological changes happening to the silica alumina interface due to the oxygen ion beam bombardment. It is also shown that stoichiometry of these films, irrespective of the oxygen ion beam energy, remains same as that of sapphire crystal.