A method of forming a pattern on a group III nitride semiconductor substrate and method of manufacturing a group III nitride semiconductor light emitting device

A method of forming a pattern on a group III nitride semiconductor substrate, the method comprising: Irradiating a laser beam on first areas of a first surface of a group III Nitridhalbleitersubstrats to prevent etching in the group III nitride semiconductor substrate, wherein the first regions of at least a second portion of the first surface of the group III-Nitridhalbleitersubstrats are separated by means and wherein the first regions are crystallized again using the laser irradiation; and Etching the at least one second area excluding the first regions, wherein the laser beam irradiated by the first regions are used as a mask.