Organometallic compounds with silylamine ligand, and method for deposition of a thin-film of metal oxide or silicon-containing metal oxide therefrom

PURPOSE: A novel single organic metal precursor compound is provided to enhance volatility and to usefully deposit single metal oxide(TiO_2,ZrO_2,HfO_2), and complex metal oxide(ZrSiOx,HfSiOx) thin film. CONSTITUTION: An organic metal precursor compound for deposition of a metal oxide or metal-silicon oxide thin film is denoted by chemical formula 1. The organic metal precursor compound o chemical formula 1 contains an organic metal precursor of chemical formulas 2 or 3. A thin film deposition method is used for forming metal thin film, metal oxide thin film or metal-silicon oxide thin film using the precursor compound. The thin film is performed by ALD(atomic layer deposition) or MOCVD(metal organic chemical vapor deposition).