Experimental and theoretical mobility of electrons in δ‐doped GaAs

We have prepared and measured the mobility of several samples of planar‐doped GaAs. A maximum electron density of 2.7×1013 cm−2 has been obtained. Calculations of the mobility in a complete quasi‐two‐dimensional description are presented and compared with the measured results. Qualitatively, all features in the mobility are reproduced; the quantitative comparison may indicate that compensation effects play a role.