Injection of spin polarization into Si from the heterostructure LaMnO3/Si interface

We employ a simple structure of LaMnO3/Si in our studies and find that electrons at the Fermi level can be completely spin polarized in several Si layers. Our calculations show that the system of LaMnO3/Si is more stable with a reconstructed Si surface. There is charge transfer between Mn and Si atoms at the interface, and these migrated electrons are responsible for the magnetic moment increase of Si surface atoms. However, the band gap in the spin-down channel is detrimental to the electron transfer, but, surprisingly, it introduces a complete spin polarization in the spin-up states at the Fermi level.