A method for manufacturing a silicon carbide substrate and the silicon carbide substrate

The method for manufacturing the silicon carbide substrate (1) is a preparing a plurality of SiC substrate made of single crystal silicon carbide (20), and looked more SiC substrate (20) in plan view are arranged side by side multi-state, forming a base layer (10) made of silicon carbide for holding a plurality of SiC substrates (20), and forming the filling portion for filling the plurality of SiC substrates (20) gap between the (60) It is provided.