Trace amount of niobium doped β-Ga2O3 deep ultraviolet photodetector with enhanced photo-response

Abstract The growth of trace amount of niobium (Nb) doped  β -Ga 2 O 3 thin films have been demonstrated on (0001) sapphire substrates by radio frequency magnetron co-sputtering method. The crystallization, morphology and optical properties of Nb doped  β -Ga 2 O 3 films have been investigated. The deep ultraviolet (DUV) photodetector with a metal–semiconductor–metal structure based on trace amount of Nb doped  β -Ga 2 O 3 thin film was fabricated. The DUV photodetector exhibits high photo-to-dark-current ratio and fast photo-response speed, suggesting the performance of  β -Ga 2 O 3 photodetector can be improved by doping trace amount of Nb in  β -Ga 2 O 3 thin film.