Hot electron characterization in Si-MOSFETs : Technologies supporting semiconductor scientific manufacturing : Process monitoring, testing, failure analysis and reliability

We have directly observed the energy distributions of hot electrons in Si Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). We used a Lateral Hot-Electron Transistor (LHET) employing two potential barriers (an emitter barrier and a collector barrier) that divided the Si surface into three regions (emitter, base, and collector). For an emitter-base voltage of -1.2 V, hot electrons with an excess energy of 1.3eV were detected at the collector. The ratio of hot electrons to the injected electrons was 5.0%.