Pyroelectricity of Pb(Zr0.52Ti0.48)O3 films grown by sol–gel process on silicon

Abstract Pyroelectric Pb(Zr 0.52 Ti 0.48 )O 3 films have been grown by sol–gel process on Si(001). Intrinsic pyroelectric coefficient has been measured through ferroelectric loops recorded at different temperatures and is about − 300 μC/m 2 K. Corresponding converted pyroelectric power density is estimated to be ~ 1 mW/cm 3 for a temperature variation of 10 °C every 6 s. Pyroelectric response of these films has been confirmed by direct measurements of the pyroelectric current with temperature variations at zero electric field. These results are of high interest for integrated thermally-sensitive devices.