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Influences of silicon doping of InAs quantum dot layers on optical characteristics of InAs/GaAs quantum dot infrared photodetector
Influences of silicon doping of InAs quantum dot layers on optical characteristics of InAs/GaAs quantum dot infrared photodetector
2005
C. Y. Huang
T. M. Ou
S. T. Chou
M. C. Wu
Shih-Yen Lin
J. Y. Chi
C.Y. Chen
S.F. Horng
B.Y. Hsu
C. C. Chi
Keywords:
Optoelectronics
Quantum dot
Infrared
Materials science
Silicon
Quantum
Photodetector
Doping
Correction
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