Advanced SOI MOSFET for low voltage, low power and fast application

Today CMOS technologies allowing low supply voltage, lower power consumption and high operation speed gain importance. CMOS technologies on SIMOX substrates are expected to be superior to bulk silicon technologies for low voltage applications. SIMOX transistors have a nearly ideal subthreshold slope of about 60 mV/dec at low silicon film thickness. On the other hand the threshold voltage strongly depends on the silicon film thickness variation. In this paper SIMOX transistors are optimized and parameters determining threshold voltage are investigated by process and device simulation.