Structural Characterization of Arsenic Implanted SOI

Solid phase epitaxy re-growth of arsenic implanted in silicon on insulator (SOI) was studied by Rutherford Backscattering Spectrometry and Transmission Electron Microscopy. Two SOI structures with different Si overlayer and buried oxide thicknesses were used. The As implantations were performed with a single energy of 20 keV to a dose of 5x10 cm in both substrates. A plateau-like profile was achieved in an additional set of SOI samples by triple energy implantation. Rapid thermal annealing and conventional furnace annealing were applied for recrystallization and dopant activation. The results are discussed considering the amorphization depth reached by dopant implantation and the crystal recovery process via thermal treatment.